Global IGBT and Super Junction MOSFET Market Trends, Applications, Analysis, Growth, and Forecast to 2027

MarketResearch.biz, in its upcoming report titled, “Global IGBT and Super Junction MOSFET Market Trends, Applications, Analysis, Growth, and Forecast to 2027”, offers in-depth insights, revenue details, and other vital information regarding the global IGBT and super junction MOSFET market and the various trends, drivers, restraints, opportunities, and threats in the target market till 2027. The report also offers insightful and detailed information regarding the various key players operating in the global IGBT and super junction MOSFET market, and their financials, apart from strategies, acquisitions & mergers, and market footprint. The global IGBT and super junction MOSFET market is segmented on the basis of product type, application, and region. The global IGBT and super junction MOSFET market was valued at US$ X.X billion in 2016, and is expected to reach US$ X.X billion over the forecast period at a CAGR of XX.X%.

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Insulated-gate bipolar transistor (IGBT) and small junction metal–oxide–semiconductor field-effect transistor (MOSFET) are semiconductor switching devices commonly used in high power circuit electronics such as converters, invertors, power supplies etc. They provide fast switching of current and incur low power losses.

Increasing application in motor drives, consumer electronics, and smart grid network are major factors driving growth of the global IGBT and super junction MOSFET market. In addition, increasing adoption in electric and hybrid vehicles, solar invertors, and for rail tractions are expected to further drive growth of the global IGBT and super junction MOSFET market. Increasing green IT initiatives and increasing number of data centers are further expected to fuel growth of the global IGBT and super junction MOSFET market. Moreover, features such as variable speed control, low ON resistance, and high voltage capacity are factors driving growth of the global market.

A major factor hampering growth of the global IGBT and super junction MOSFET market is availability of substitutes. In addition, voltage latch and its inability to block high reverse voltage are some major challenges hampering adoption of IGBT, which is further restraining growth of the global IGBT and super junction MOSFET market.

Asia pacific dominates the global IGBT and super junction MOSFET market and is expected to register highest CAGR of XX.X % during the forecast period. This growth can be attributed to presence of major vendors and increasing application in high power electronics. The market in North America hold second position and is expected to witness significant growth during the forecast period, followed by the market in Europe.

Market Segmentation

Segmentation on the basis of product type:

• IGBT
• Discrete IGBT
• IGBT module
• Super junction MOSFET
• Discrete super junction MOSFET
• Super junction MOSFET module

Segmentation on the basis of application:

• Residential
• Uninterrupted power supply (UPS)
• Wind turbines
• Photovoltaic (PV) inverter
• Rail traction
• Consumer applications
• Electric vehicles/hybrid electric vehicles (EV/HEV)
• Motor drives
• Industrial applications
• Others (servers, telecom and networking devices, etc.)

Segmentation on the basis of region:

• North America
• Europe
• Asia Pacific
• Latin America
• Middle East & Africa

• Infineon Technologies
• Mitsubishi Electric
• Fuji Electric
• ABB Ltd.
• Hitachi Power Semiconductor Device Ltd.
• Semikron Inc.
• Fairchild Semiconductor International Inc.
• Toshiba Corporation
• STMicroelectronics N.V.
• Vishay Intertechnology Inc.