Global High-k and ALD/CVD Metal Precursors Market Trends, Applications, Analysis, Growth, and Forecast to 2027

MarketResearch.biz, in its upcoming report titled, “Global high-k and ALD/CVD Metal Precursors Market Trends, Applications, Analysis, Growth, and Forecast to 2027”, offers in-depth insights, revenue details, and other vital information regarding the global high-k and ALD/CVD metal precursors market and the various trends, drivers, restraints, opportunities, and threats in the target market till 2027. The report also offers insightful and detailed information regarding the various key players operating in the global high-k and ALD/CVD metal precursors market, and their financials, apart from strategies, acquisitions & mergers, and market footprint. The global high-k and ALD/CVD metal precursors market is segmented on the basis of technology, and region. The global high-k and ALD/CVD metal precursors market was valued at US$ XXX.X million in 2016, and is expected to reach US$ XXX.X million over the forecast period at a CAGR of XX.X%.

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Chemical vapor deposition (CVD) is a chemical process for deposition of solid material on a substrate in presence of precursors gases so as to have a controlled chemical reaction. Atomic layer deposition (AVD) is a subcategory of CVD in which it is possible to achieve atomic level control and deposition. High-k are materials with high dielectric constant as compared to silicon dioxide and is expected to replace it in near future especially in microelectronic components.

Increasing demand for miniaturization, efficient electronic and semiconductor devices, and increasing adoption of internet of things (IoT) are primary factors driving demand for high-k and ALD/CVD metal precursors in the global market. In addition, improper or poor film deposition by other methods is further driving demand for high-k and ALD/CVD deposition method in the global market. Increasing adoption of high-k and ALD/CVD metal precursor process in sectors such as defense, military, and civil for various application is expected to further fuel growth of the global high-k and ALD/CVD metal precursors market.

A major factor hampering growth of global high-k and ALD/CVD metal precursors market is that it is limited to few types of metals such as rhodium, platinum, and palladium, owing to which the process isn’t cost effective. In addition, increasing R&D activities and adoption of nanotechnology in various electronics is further expected to create lucrative opportunities for major players, which is expected to drive growth of the global high-k and ALD/CVD metal precursors market to a significant extent during the forecast period.

Asia pacific dominates the global high-k and ALD/CVD metal precursors market in terms of revenue and is expected to register highest CAGR of XX.X% during the forecast period. This growth can be attributed to presence of major vendors in countries such as China and Japan. The market in North America holds second position and is expected to register a CAGR of XX.X% during for forecast period, followed by the market in Europe.

Market Segmentation:

Segmentation on the basis of technology:

• Interconnect
• Capacitor
• Gates

Segmentation on the basis of region:

• North America
• Europe
• Asia Pacific
• Latin America
• Middle East & Africa

• Air Liquide S.A.
• Air Products & Chemicals, Inc.
• Praxair, Inc.
• SAFC Hitech (Sigma-Aldrich Corporation)
• The Dow Chemical Company
• Dynamic Network Factory Inc.
• NANMAT Technology Co. Ltd.
• JSR Corporation
• Samsung Electronics
• Adeka Corporation